Samsung announces new technology advancements

DUBAI — Samsung Electronics Co yesterday announced component technology advancements including the 40-nanometer (nm) 32-Gigabit (Gb) NAND flash, the first prototype of the next-generation of memory — PRAM (Phase change Random Access Memory), and a new System-on-Chip controller for the soon-to-be-released Hybrid Hard Disk Drive.

  • Follow us on
  • google-news
  • whatsapp
  • telegram

Published: Thu 28 Sep 2006, 8:45 AM

Last updated: Sat 4 Apr 2015, 1:24 PM

"The phenomenal shift in the popularity of digital products that we are experiencing today is rooted in the virtually non-stop string of advances being seen in semiconductor technology," said Dr Chang Gyu Hwang, president and CEO of Samsung Electronics' Semiconductor Business, at the sixth annual Press conference held at the Shilla Hotel in downtown Seoul, Korea.

Samsung anticipates flash technology to continue to enable a new world of digital performance where consumers can affordably take whatever amounts of entertainment and informational data they want to wherever they want to go. As the world moves toward greater globalisation and more universal dissemination of information, Dr. Hwang said providing the convenience of added portability through a broad diversity of flash-driven mobile applications will bring about a new utopia of storage-based freedom, which Samsung is referring to as Flashtopia.

NAND flash has been the data storage device in virtually all digital cameras, USB drives and MP3 players, as well as most multimedia handsets and smart phones. This year, NAND flash also is entering the PC computing environment. Samsung launched the first solid-state-disk (SSD) notebooks, called SENS Q3-SSD and SENS Q1-SSD in June. Their higher performance, lighter weight and enhanced storage reliability are key factors attracting mobile developers to NAND flash.



More news from